2SC2703 Datasheet - Toshiba Semiconductor

2SC2703 Silicon NPN TRANSISTOR

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SC2703 Audio Power Amplifier Applications 2SC2703 Unit: mm High DC current gain: hFE = 100 to 320 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating 30 30 5 1 0.1 900 150 55 to 150 Unit V V V A A mW.

2SC2703_ToshibaSemiconductor.pdf