2SC2707 Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min. High Power Dissipation. Complement to Type 2SA1147. Minimum Lot-to-Lot v.

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Datasheet Specifications

Part number: 2SC2707
Manufacturer: Inchange Semiconductor
File Size: 189.94 KB
Datasheet: 2SC2707_InchangeSemiconductor.pdf
Description: Power Transistor

Applications

* Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB

2SC2707 Distributors

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2SC2707 Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SC2707-like datasheet