2SC2707 - Power Transistor

Datasheet Summary

Description

Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) High Power Dissipation Complement to Type 2SA1147 Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for power switching amplifier and general purpose applicatio

Inchange Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	2SC2707
Manufacturer	Inchange Semiconductor
File Size	189.94 KB
Description	Power Transistor
Datasheet	2SC2707 Datasheet
Additional preview pages of the 2SC2707 datasheet.

📁 Similar Datasheet

2SC2703 - Silicon NPN TRANSISTOR (Toshiba Semiconductor)
2SC2703 - NPN Transistor (JCET)
2SC2703 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
2SC2704 - Silicon NPN Transistor (Toshiba)
2SC2705 - TRANSISTOR (Toshiba Semiconductor)
2SC2705 - NPN Transistor (INCHANGE)
2SC2705 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
2SC2706 - NPN Transistor (INCHANGE)
2SC2706 - SILICON POWER TRANSISTOR (SavantIC)
2SC2706 - Silicon NPN Transistor (Toshiba)

Other Datasheets by Inchange Semiconductor

2SC2716 - Silicon NPN Power Transistor
2SC2734 - Silicon NPN RF Transistor
2SC2735 - Silicon NPN RF Transistor
2SC2736 - Silicon NPN RF Transistor
2SC2738 - Silicon NPN Power Transistors
2SC2759 - Silicon NPN RF Transistor
2SC2233 - Silicon NPN Power Transistor
2SC2242 - Silicon NPN Power Transistor

Full PDF Text Transcription

Click to expand full text

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 180V(Min.) ·High Power Dissipation ·Complement to Type 2SA1147 ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for power switching amplifier and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 180 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 15 A IB Base Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 5 A 150 W 150 ℃ Tstg Storage Temperature -65~150 ℃ 2SC2707 isc website：www.iscsemi.

Published: Sep 22, 2009 |