2SC2716 Silicon NPN Power Transistor

Inchange Semiconductor

Description

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2716 .
High Power Gain: Gp≥12dB,f= 27MHz, PO= 16W. High Reliability APPLICATIONS. Designed for RF power amplifier applications.

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Datasheet Specifications

Part number: 2SC2716
Manufacturer: Inchange Semiconductor
File Size: 70.82 KB
Datasheet: 2SC2716_InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for RF power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V ICM Collector Current Collector Power Dissipation @TC=25℃ 6 A 20 W PC

2SC2716 Distributors

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2SC2716 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SC2716-like datasheet