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2SC2716 Datasheet - Inchange Semiconductor

2SC2716 Silicon NPN Power Transistor

*High Power Gain: Gp≥12dB,f= 27MHz, PO= 16W *High Reliability APPLICATIONS *Designed for RF power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Volta.

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Datasheet Details

Part number:

2SC2716

Manufacturer:

Inchange Semiconductor

File Size:

70.82 KB

Description:

Silicon npn power transistor.

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2SC2716 2SC2716 Silicon NPN Power Transistor Inchange Semiconductor