Datasheet Details
- Part number
- 2SC2716
- Manufacturer
- Inchange Semiconductor
- File Size
- 70.82 KB
- Datasheet
- 2SC2716_InchangeSemiconductor.pdf
- Description
- Silicon NPN Power Transistor
2SC2716 Description
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2716 .
High Power Gain: Gp≥12dB,f= 27MHz, PO= 16W.
High Reliability
APPLICATIONS.
Designed for RF power amplifier applications.
2SC2716 Applications
* Designed for RF power amplifier applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
80
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
5
V
ICM
Collector Current Collector Power Dissipation @TC=25℃
6
A
20 W
PC
📁 Related Datasheet
📌 All Tags