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2SC2073A
TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT Process)
2SC2073A
Power Amplifier Applications Vertical Output Applications
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO 150 V
Collector-emitter voltage
VCEO 150 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 1.5 A
Base current
IB 0.5 A
Collector power dissipation
Junction temperature
Ta = 25°C Tc = 25°C
PC Tj
2.0 W
25 150 °C
1.Base 2.Collector 3.Emitter
Storage temperature range
Tstg
−55 to 150
°C
JEDEC
―
Note1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
2SC2073A Datasheet
