2SC2104 - Silicon NPN Transistor

Toshiba

Key Features

. Output Power : P G =3W(Min. ) (f=470MHz, V C c=12.6V, Pi=0.4W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V C C=15V, Pi= 0.4W, f=470MHz Unit in mm m%.

2SC2104 silicon npn transistor by Toshiba - Datasheet Preview

Datasheet Details

Part number	2SC2104
Manufacturer	Toshiba
File Size	62.69 KB
Description	Silicon NPN Transistor
Datasheet	2SC2104 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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: SILICON NPN EPITAXIAL PLANAR TYPE UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES . Output Power : P G =3W(Min.) (f=470MHz, V C c=12.6V, Pi=0.4W) . 100% Tested for Load Mismatch Stress at All Phase Angles with 30:1 VSWR @ V C C=15V, Pi= 0.