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1
SILICON NPN EPITAXIAL PLANAR TYPE
VHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES : . Output Power : Po=15W (Min.)
( f=l 75MHz, Vcc=12.5V, Pi=1.3W) 100% Tested for Load Mismatch Stress at All Phase Angles with 30; 1 VSWR @ Vcc=15V, Pi= 1.3W, f=175MHz
Unit in mm
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL RATING UNIT
Collector-Base Voltage
VcBO
35
Collector-Emitter Voltage
VCEO
18
Emitter-Base Voltage Collector Current
Collector Power Dissipation (Tc=25°C)
v EBO ic
PC
3.5 3.5
35
1. EMITTER 2. BASE 3. EMITTER 4. COLLECTOR
Junction Temperature
175
Storage Temperature Range
T stg -65-175 °C TOSHIBA
2-10G1A
ELECTRICAL CHARACTERISTICS (Ta=25 °C)
Mounting Kit No. AC57 Weight : 3 . 3g
CHARACTERISTIC
SYMBOL
TEST CONDITION
MIN. TYP. MAX.
2SC2102 Datasheet
