2SC2106
2SC2106 is Silicon NPN Transistor manufactured by Toshiba.
:
SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
Features
. Output Power : P =12W(Min.)
(f=470MHz, VCC=12.6V, Pi=3W) . 100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ vC c=15V, Pi= 3W, f=470MHz
Unit in mm
MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C) Junction Temperature Storage Temperature Range
SYMBOL VCBO VCEO v EB0 ic
Ti T stg
ELECTRICAL CHARACTERISTICS (Ta=25°C)
CHARACTERISTIC
SYMBOL
Collector Cut-off Current Collector-Base Breakdown Voltage
ICBO v (BR)CB0
Collector-Emitter Breakdown Voltage Emitter-Base...
