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SILICON NPN EPITAXIAL PLANAR TYPE
UHF BAND POWER AMPLIFIER APPLICATIONS.
FEATURES . Output Power : P =6W(Min.)
(f =4 70MHz, V C c=12.6V, P 1 =1W) . 100% Tested for Load Mismatch Stress at All Phase
Angles with 30:1 VSWR @ V CC=12.6V, P =6.5W, f=470MHz
Unit in nun
MAXIMUM RATINGS (Ta=25°C)
CHARACTERISTIC
SYMBOL
RATING UNIT
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation
(Tc=25°C)
v CBO VCEO v EBO ic
35 17 3.5 1.4
15
1. EMITTER 2. BASE a EMITTER 4. COLLECTOR
Junction Temperature Storage Temperature Range
ELECTRICAL CHARACTERISTICS (Ta=25°C)
175
-65-175
°C
TOSHIBA
2-10G1A
Weight : 3.3g Mounting Kit No.
2SC2105 Datasheet
