Datasheet Summary
SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
POWER AMPLIFIER APPLICATIONS. VERTICAL OUTPUT APPLICATIONS.
Features
: . Wide Safe Operating Area. . plementary to 2SA940
Unit in mm 1Q3MAX. 03.6±O.2
MAXIMUM RATINGS (Ta=25°C;
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage vEBO
Collector Current ic
Base Current
Collector Power Dissipation
Ta=25°C PC
Tc=25°C
Junction Temperature Storage Temperature Range
T j r stg
RATING UNIT
°C
-55-150 °c
2.5 4
2.5 4
12 3 l^
1. BASE 2. collector Cheat sink) 3. EMITTER
T0-220AJ
TOSHIBA
2-10A1A...
