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SILICON NPN TRIPLE DIFFUSED TYPE (PCT PROCESS)
2SC2073
POWER AMPLIFIER APPLICATIONS. VERTICAL OUTPUT APPLICATIONS.
FEATURES: . Wide Safe Operating Area. . Complementary to 2SA940
Unit in mm 1Q3MAX. 03.6±O.2
MAXIMUM RATINGS (Ta=25°C;
CHARACTERISTIC
SYMBOL
Collector-Base Voltage
VCBO
Collector-Emitter Voltage
VCEO
Emitter-Base Voltage
vEBO
Collector Current
ic
Base Current
IB
Collector Power Dissipation
Ta=25°C PC
Tc=25°C
Junction Temperature Storage Temperature Range
T
j
r stg
RATING UNIT
150
V
150
V
5
V
1.5
A
0.5
A
1.5
V
25
150
°C
-55-150 °c
X
2.5 4
2.5 4
12 3
l^
1. BASE 2. collector Cheat sink) 3. EMITTER
T0-220AJ
TOSHIBA
2-10A1A
Weight • 1.9g
Mounting kit No.
2SC2073 Datasheet
