* . Excellent Switching Times : t r =1.0/is (Max.), tf=1.0 >us (Max.) (Ic=3A) . High Collector Breakdown Voltage : Vcgo= 800V INDUSTRIAL APPLICATION Unit in mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 900 Collector-Emitter Voltage VcEO 800 Emitt
2SC2793
100.56 KB
Silicon npn transistor.
SILICON NPN TRIPLE DIFFUSED TYPE
HIGH SPEED AND HIGH VOLTAGE SWITCHING APPLICATIONS.
SWITCHING REGULATOR APPLICATIONS.
HIGH SPEED DC-DC CONVERTER APP.
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