2SC2791 NPN Transistor

INCHANGE

Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 800V(Min. High Switching Speed. Minimum Lot-to-Lot variations for robust device p.

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Datasheet Specifications

Part number: 2SC2791
Manufacturer: INCHANGE
File Size: 185.95 KB
Datasheet: 2SC2791-INCHANGE.pdf
Description: NPN Transistor

Applications

* High speed and high voltage switching applications
* Switching regulator applications
* High speed DC-DC converter applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 900 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-B

2SC2791 Distributors

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2SC2791 NPN Transistor INCHANGE

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