* High Transition Frequency : f T=200MHz(Min f )
* Low Saturation Voltage : VCE ( sat )=0.25V(Max.) at I c=10mA, Ig=lmA
* High Switching Speed : t stg^25ns(Typ. 00.45 ,02.54 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage Collector- Emitter Voltage Emitter-B
2SC395A
175.90 KB
Silicon npn transistor.
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SILICON NPN EPITAXIAL PLANAR TYPE
(INDUSTRIAL APPLICATIONS)
2SC395A
ULTRA HIGH SPEED SWITCHING APPLICATIONS. COMPUTER, COUNTER APPLICATIONS.
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Outline
MPAK-4
2
1
3 1 4
3
1. Collector 2. Emitter 3. Base 4. NC
2
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