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2SK3497 Datasheet - Toshiba

2SK3497 N-Channel MOSFET

www.DataSheet4U.com 2SK3497 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π MOSV) 2SK3497 High Power Amplifier Application Unit: mm High breakdown voltage: VDSS = 180V Complementary to 2SJ618 Maximum Ratings (Ta = 25°C) Characteristics Drain source voltage Gate source voltage Drain current DC (Note ) Symbol VDSS VGSS ID IDP PD Tch Tstg Rating 180 ±12 10 30 130 150 55~150 Unit V V A A W °C °C 1. GATE 2. DRAIN (HEAT SINK) 3. SOURCE Pulse (Note ) .

2SK3497_Toshiba.pdf

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Datasheet Details

Part number:

2SK3497

Manufacturer:

Toshiba ↗

File Size:

225.73 KB

Description:

N-channel mosfet.

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