. High Breakdown Voltage : V(br)dSS=400V
. High Forward Transfer Admittance : 1 Yf s l =5S(Typ. . Low Leakage Current : I GS s=±100nA(Max. ) @ VGs=±20V
lDSS=lmA(Max.) @
✔ 2SK324 Application
SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS.
INDUSTRIAL APPLICATIONS Unit in mm
FEA
2SK320 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK320
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Volt.
2SK320 - (2SK319 / 2SK320) SILICON N-CHANNEL MOS FET
(Hitachi Semiconductor)
..
.
2SK320 - (2SK319 / 2SK320) SILICON N-CHANNEL MOS FET
(Hitachi Semiconductor)
..
.
2SK3204 - N-Channel MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3204
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3204 is N-Channel MOS Field Effe.
2SK3205 - N-Channel MOSFET
(Toshiba Semiconductor)
2SK3205
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)
2
2SK3205
Switching Regulator Applications DC−DC Converter, and Motor .
2SK3207 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3207
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-758A(Z) Target Specification 2nd. Edition Feb 1999 Features
• Low on-resistance .
2SK3209 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3209
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features
• Low on-resista.
2SK3209 - Silicon N-Channel MOSFET
(Renesas)
2SK3209
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 40 mΩ typ.
• High speed switching • 4 V gate drive dev.
2SK321 - N-Channel MOSFET
(Panasonic Semiconductor)
.
2SK3211 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resista.
