* . High Breakdown Voltage : V(br)dSS=400V . High Forward Transfer Admittance : 1 Yf s l =5S(Typ. . Low Leakage Current : I GS s=±100nA(Max. ) @ VGs=±20V lDSS=lmA(Max.) @ VDs=400V . Enhancement-Mode : V t h=l . 5 ~3. 5V @ lD=lmA MAX MUM RATINGS (Ta=25°C) CHARACTERISTIC Drain-Source Voltage Gate
2SK324
132.22 KB
N-channel transistor.
SILICON N CHANNEL MPS TYPE (fr-MOS) 2SK324 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. SWITCHING REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APP.
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