2SK320 Datasheet, Transistor, Inchange Semiconductor

PDF File Details

Part number:

2SK320

Manufacturer:

Inchange Semiconductor

File Size:

59.83kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor.

  • Drain Current   –ID=5A@ TC=25℃
  • Drain Source Voltage- : VDSS= 450V(Min)
  • Fast Switching Speed

  • Datasheet Preview: 2SK320 📥 Download PDF (59.83kb)
    Page 2 of 2SK320

    2SK320 Application

    • Applications
    • High speed power Switching. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS VGS ID Ptot Tj Tstg Drain-Sou

    TAGS

    2SK320
    N-Channel
    MOSFET
    Transistor
    Inchange Semiconductor

    📁 Related Datasheet

    2SK320 - (2SK319 / 2SK320) SILICON N-CHANNEL MOS FET (Hitachi Semiconductor)
    .. .

    2SK320 - (2SK319 / 2SK320) SILICON N-CHANNEL MOS FET (Hitachi Semiconductor)
    .. .

    2SK3204 - N-Channel MOSFET (NEC)
    DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3204 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3204 is N-Channel MOS Field Effe.

    2SK3205 - N-Channel MOSFET (Toshiba Semiconductor)
    2SK3205 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV) 2 2SK3205 Switching Regulator Applications DC−DC Converter, and Motor .

    2SK3207 - N-Channel MOSFET (Hitachi Semiconductor)
    2SK3207 Silicon N Channel MOS FET High Speed Power Switching ADE-208-758A(Z) Target Specification 2nd. Edition Feb 1999 Features • Low on-resistance .

    2SK3209 - N-Channel MOSFET (Hitachi Semiconductor)
    2SK3209 Silicon N Channel MOS FET High Speed Power Switching ADE-208-759(Z) Target Specification 1st. Edition December 1998 Features • Low on-resista.

    2SK3209 - Silicon N-Channel MOSFET (Renesas)
    2SK3209 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 40 mΩ typ. • High speed switching • 4 V gate drive dev.

    2SK321 - N-Channel MOSFET (Panasonic Semiconductor)
    .

    2SK3211 - N-Channel MOSFET (Hitachi Semiconductor)
    2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resista.

    2SK3211 - Silicon N-Channel MOSFET (Renesas)
    2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V.

    Stock and price

    part
    Renesas Electronics Corporation
    NCH POWER MOSFET 150V 25A 45MOHM TO-220F - Trays (Alt: 2SK3209-E)
    Avnet Americas
    2SK3209-E
    0 In Stock
    Qty : 1 units
    Unit Price : $3.75
    Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts