Datasheet4U Logo Datasheet4U.com

2SK3218

N-Channel MOSFET Transistor

2SK3218 Features

* Drain Current : ID= 40A@ TC=25℃

* Drain Source Voltage : VDSS= 150V(Min)

* Static Drain-Source On-Resistance : RDS(on) = 43mΩ(Max) @ VGS= 10V

* 100% avalanche tested

* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION

* motor drive, D

2SK3218 General Description


*motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 150 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 40 A IDM Drain Current-Single Pluse 160 A PD To.

2SK3218 Datasheet (284.24 KB)

Preview of 2SK3218 PDF

Datasheet Details

Part number:

2SK3218

Manufacturer:

Inchange Semiconductor

File Size:

284.24 KB

Description:

N-channel mosfet transistor.

📁 Related Datasheet

2SK321 - N-Channel MOSFET (Panasonic Semiconductor)
.

2SK3211 - N-Channel MOSFET (Hitachi Semiconductor)
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resista.

2SK3211 - Silicon N-Channel MOSFET (Renesas)
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V.

2SK3211L - N-Channel MOSFET (Hitachi Semiconductor)
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resista.

2SK3211L - Silicon N-Channel MOSFET (Renesas)
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V.

2SK3211S - N-Channel MOSFET (Hitachi Semiconductor)
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resista.

2SK3211S - Silicon N-Channel MOSFET (Renesas)
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V.

2SK3212 - N-Channel MOSFET (Hitachi Semiconductor)
2SK3212 Silicon N Channel MOS FET High Speed Power Switching ADE-208-752 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ.

TAGS

2SK3218 N-Channel MOSFET Transistor Inchange Semiconductor

Image Gallery

2SK3218 Datasheet Preview Page 2

2SK3218 Distributor