2SK3218 Datasheet, Transistor, Inchange Semiconductor

2SK3218 Features

  • Transistor
  • Drain Current : ID= 40A@ TC=25℃
  • Drain Source Voltage : VDSS= 150V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 43mΩ(Max) @ VGS= 10V
  • 100% avalan

PDF File Details

Part number:

2SK3218

Manufacturer:

Inchange Semiconductor

File Size:

284.24kb

Download:

📄 Datasheet

Description:

N-channel mosfet transistor. motor drive, DC-DC converter, power switch and solenoid drive. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE

Datasheet Preview: 2SK3218 📥 Download PDF (284.24kb)
Page 2 of 2SK3218

2SK3218 Application

  • Applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipmen

TAGS

2SK3218
N-Channel
MOSFET
Transistor
Inchange Semiconductor

📁 Related Datasheet

2SK321 - N-Channel MOSFET (Panasonic Semiconductor)
.

2SK3211 - N-Channel MOSFET (Hitachi Semiconductor)
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resista.

2SK3211 - Silicon N-Channel MOSFET (Renesas)
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V.

2SK3211L - N-Channel MOSFET (Hitachi Semiconductor)
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resista.

2SK3211L - Silicon N-Channel MOSFET (Renesas)
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V.

2SK3211S - N-Channel MOSFET (Hitachi Semiconductor)
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-761A (Z) 2nd. Edition February 1999 Features • • • Low on-resista.

2SK3211S - Silicon N-Channel MOSFET (Renesas)
2SK3211(L), 2SK3211(S) Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS = 60 mΩ typ. • High speed switching • 4 V.

2SK3212 - N-Channel MOSFET (Hitachi Semiconductor)
2SK3212 Silicon N Channel MOS FET High Speed Power Switching ADE-208-752 (Z) 1st. Edition February 1999 Features • Low on-resistance R DS = 0.1 Ω typ.

2SK3212 - Silicon N-Channel MOSFET (Renesas)
2SK3212 Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =0.1 Ω typ. • High speed switching • 4 V gate drive devi.

2SK3214 - N-Channel MOSFET (Hitachi Semiconductor)
2SK3214 Silicon N Channel MOS FET High Speed Power Switching ADE-208-763(Z) Target Specification 1st. Edition December 1998 Features • Low on-resista.

Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts