Part number:
2SK3218
Manufacturer:
Inchange Semiconductor
File Size:
284.24 KB
Description:
N-channel mosfet transistor.
* Drain Current : ID= 40A@ TC=25℃
* Drain Source Voltage : VDSS= 150V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 43mΩ(Max) @ VGS= 10V
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION
* motor drive, D
2SK3218
Inchange Semiconductor
284.24 KB
N-channel mosfet transistor.
📁 Related Datasheet
2SK321 - N-Channel MOSFET
(Panasonic Semiconductor)
.
2SK3211 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resista.
2SK3211 - Silicon N-Channel MOSFET
(Renesas)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V.
2SK3211L - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resista.
2SK3211L - Silicon N-Channel MOSFET
(Renesas)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V.
2SK3211S - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-761A (Z) 2nd. Edition February 1999 Features
• • • Low on-resista.
2SK3211S - Silicon N-Channel MOSFET
(Renesas)
2SK3211(L), 2SK3211(S)
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 60 mΩ typ.
• High speed switching • 4 V.
2SK3212 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3212
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-752 (Z) 1st. Edition February 1999 Features
• Low on-resistance R DS = 0.1 Ω typ.