Part number:
2SK3209
Manufacturer:
Hitachi Semiconductor
File Size:
26.42 KB
Description:
N-channel mosfet.
* Low on-resistance R DS =35mΩ typ.
* High speed switching
* 4V gate drive device can be driven from 5V source Outline TO
* 220FM D G 1 2 S 1. Gate 2. Drain 3. Source 3 2SK3209 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltag
2SK3209
Hitachi Semiconductor
26.42 KB
N-channel mosfet.
📁 Related Datasheet
2SK320 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
isc Product Specification
2SK320
DESCRIPTION ·Drain Current –ID=5A@ TC=25℃ ·Drain Source Volt.
2SK320 - (2SK319 / 2SK320) SILICON N-CHANNEL MOS FET
(Hitachi Semiconductor)
..
.
2SK320 - (2SK319 / 2SK320) SILICON N-CHANNEL MOS FET
(Hitachi Semiconductor)
..
.
2SK3204 - N-Channel MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3204
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3204 is N-Channel MOS Field Effe.
2SK3205 - N-Channel MOSFET
(Toshiba Semiconductor)
2SK3205
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L −π−MOSV)
2
2SK3205
Switching Regulator Applications DC−DC Converter, and Motor .
2SK3207 - N-Channel MOSFET
(Hitachi Semiconductor)
2SK3207
Silicon N Channel MOS FET High Speed Power Switching
ADE-208-758A(Z) Target Specification 2nd. Edition Feb 1999 Features
• Low on-resistance .
2SK3209 - Silicon N-Channel MOSFET
(Renesas)
2SK3209
Silicon N Channel MOS FET High Speed Power Switching
Features
• Low on-resistance RDS = 40 mΩ typ.
• High speed switching • 4 V gate drive dev.
2SK321 - N-Channel MOSFET
(Panasonic Semiconductor)
.