2SK356 - N-Channel Transistor
2SK356 Features
* . Low Drain-Source ON Resistance : RdS(ON)=0- 2Q(Typ . . High Forward Transfer Admittance : ] Yf s | =6S (Typ . . Low Leakage Current : IcsS^OOnACMax. ) @ Vgs=±20V . Enhancement-Mode lDSS=lmA(Max.) @ VDS=250V : Vfj^l . 5 ~ 3. 5V @ lD=lmA INDUSTRIAL APPLICATIONS Unit in mm 02 5.0 MAX MAXIMUM RAT
