2SK3565 N-Channel MOSFET

Toshiba Semiconductor

Description

2SK3565 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3565 Switching Regulator Applications * Low drain-source ON r.

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Datasheet Specifications

Part number: 2SK3565
Manufacturer: Toshiba ↗ Semiconductor
File Size: 220.04 KB
Datasheet: 2SK3565_ToshibaSemiconductor.pdf
Description: N-Channel MOSFET

Applications

* Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ. )
* High forward transfer admittance: |Yfs| = 4.5 S (typ. )
* Low leakage current: IDSS = 100 μA (VDS = 720 V)
* Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta

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2SK3565 N-Channel MOSFET Toshiba Semiconductor

Toshiba Semiconductor 2SK3565-like datasheet