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2SK3564 - MOSFET

2SK3564 Description

( DataSheet : www.DataSheet4U.com ) TENTATIVE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3564 2SK3564 unit Switching .

2SK3564 Applications

* 10±0.3 φ3.2±0.2 2.7±0.2 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 900 900 ±30 3 9 40 TBD 3 4.0 150 -55~150 A W mJ A mJ °C °C Unit 0.69±0.

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MOSFET Toshiba Semiconductor
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