2SK3569 Datasheet - Toshiba Semiconductor

2SK3569, N-Channel MOSFET

2SK3569 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3569 Switching Regulator Applications * Low drain-source ON-r.

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Datasheet Details

Part number:

2SK3569

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

234.58 KB

Description:

N-Channel MOSFET

Applications

* Low drain-source ON-resistance: RDS (ON) = 0.54 Ω (typ. )
* High forward transfer admittance: |Yfs| = 8.5 S (typ. )
* Low leakage current: IDSS = 100 μA (max) (VDS = 600 V)
* Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Rati

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2SK3569 N-Channel MOSFET Toshiba Semiconductor

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