2SK3568 Datasheet - Toshiba Semiconductor

2SK3568 N-Channel MOSFET

2SK3568 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK3568 Switching Regulator Applications Unit: mm Low drain-source ON-resistance: RDS (ON) = 0.4 Ω (typ.) High forward transfer admittance: |Yfs| = 8.5 S (typ.) Low leakage current: IDSS = 100 μA (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drain-gate.

2SK3568_ToshibaSemiconductor.pdf