Datasheet4U Logo Datasheet4U.com

2SK3566 Datasheet - Toshiba

2SK3566 Silicon N-Channel MOSFET

2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3566 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ.) High forward transfer admittance: |Yfs| = 2.0 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Drain-source voltage Drai.

2SK3566 Datasheet (209.56 KB)

Preview of 2SK3566 PDF
2SK3566 Datasheet Preview Page 2 2SK3566 Datasheet Preview Page 3

Datasheet Details

Part number:

2SK3566

Manufacturer:

Toshiba ↗

File Size:

209.56 KB

Description:

Silicon n-channel mosfet.

📁 Related Datasheet

2SK356 N-Channel Transistor (Toshiba)

2SK3560 N-Channel MOSFET (Panasonic Semiconductor)

2SK3560 Silicon N-channel power MOSFET (Kexin)

2SK3561 Silicon N-Channel MOSFET (Toshiba)

2SK3561 N-Channel MOSFET Transistor (Inchange Semiconductor)

2SK3562 N-Channel MOSFET (Toshiba Semiconductor)

2SK3562 N-Channel MOSFET Transistor (Inchange Semiconductor)

2SK3563 N-Channel MOSFET (Toshiba Semiconductor)

TAGS

2SK3566 Silicon N-Channel MOSFET Toshiba

2SK3566 Distributor