Datasheet4U Logo Datasheet4U.com

2SK3566 - Silicon N-Channel MOSFET

2SK3566 Description

2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3566 Switching Regulator Applications * Low drain-source ON-r.

2SK3566 Applications

* Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ. )
* High forward transfer admittance: |Yfs| = 2.0 S (typ. )
* Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
* Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratin

📥 Download Datasheet

Preview of 2SK3566 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 2SK3560 - N-Channel MOSFET (Panasonic Semiconductor)
  • 2SK3562 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK3563 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK3564 - MOSFET (Toshiba Semiconductor)
  • 2SK3565 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK3567 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK3568 - N-Channel MOSFET (Toshiba Semiconductor)
  • 2SK3569 - N-Channel MOSFET (Toshiba Semiconductor)

📌 All Tags

Silicon N-Channel MOSFET Toshiba
Toshiba 2SK3566-like datasheet