2SK3566 Datasheet - Toshiba

2SK3566, Silicon N-Channel MOSFET

2SK3566 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSIV) 2SK3566 Switching Regulator Applications * Low drain-source ON-r.

datasheet Preview Page 1 from Datasheet4u.com

2SK3566_Toshiba.pdf

2SK3566 Datasheet Preview — Preview of 2SK3566 PDF

Datasheet Details

Part number:

2SK3566

Manufacturer:

Toshiba ↗

File Size:

209.56 KB

Description:

Silicon N-Channel MOSFET

Applications

* Low drain-source ON-resistance: RDS (ON) = 5.6 Ω (typ. )
* High forward transfer admittance: |Yfs| = 2.0 S (typ. )
* Low leakage current: IDSS = 100 μA (max) (VDS = 720 V)
* Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratin

2SK3566 Distributors

📁 Related Datasheet

2SK3560 2SK3562 2SK3563 2SK3564 2SK3565 2SK3567

📌 All Tags

2SK3566 Silicon N-Channel MOSFET Toshiba

Toshiba 2SK3566-like datasheet