2SK358
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N-channel transistor.
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2SK350 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK350
DESCRIPTION ·Drain Current –ID=10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 450V(Min) ·Fast Switching Speed ·10.
2SK350 - Silicon N-Channel MOSFET
(Hitachi)
.
2SK3501 - N-Channel MOSFET Transistor
(Inchange Semiconductor)
isc N-Channel MOSFET Transistor
2SK3501
FEATURES ·Drain Current : ID= 10A@ TC=25℃ ·Drain Source Voltage
: VDSS= 600V(Min) ·Static Drain-Source On-Re.
2SK3501-01 - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
2SK3501-01
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSF.
2SK3502-01MR - N CHANNEL SILICON POWER MOSET
(Fuji Electric)
2SK3502-01MR
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MO.
2SK3503 - N-Channel MOSFET
(Kexin)
SMD Type
MOSFET
N-Channel MOSFET 2SK3503
SOT-523
1.6 +0.1 -0.1
1.0 +0.1 -0.1
0.2 +0.05 -0.05
U nit: m m 0.15±0.05
0.55 (REF.)
0.8±0.1
0.36±0.1
.
2SK3503 - N-Channel MOSFET
(NEC)
DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3503
N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING
DESCRIPTION
The 2SK3503 is an N-chann.
2SK3504-01 - N-CHANNEL SILICON POWER MOSFET
(Fuji Electric)
2SK3504-01
Super FAP-G Series
Features
High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MOSF.
2SK3505 - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
2SK3505
·FEATURES ·With To-220F packaging ·Low input capacitance and gate charge ·Low gate input resistance ·100% av.
2SK3505-01MR - N-Channel MOSFET
(Sanyo Semicon Device)
2SK3505-01MR
Super FAP-G Series
Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof
FUJI POWER MO.
