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2SK358 Datasheet - Toshiba

2SK358 N-Channel Transistor

2SK358 Features

* . Low Drain-Source ON Resistance : RD g (qn) = 0- 7fi (Typ . . High Forward Transfer Admittance: lYf s l=2.3S (Typ.) . High Drain Current : Idp=8A (Max.) . Low Leakage Current: IGSS =±100nA (Max.) @ VG s=±20V . Enhancement-Mode I DSS=lmA (Max.) @ V DS=250V : V t h=1.5~3.5V @ Io=lmA INDU

2SK358-Toshiba.pdf

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Datasheet Details

Part number:

2SK358

Manufacturer:

Toshiba ↗

File Size:

131.87 KB

Description:

N-channel transistor.

2SK358 Distributor

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2SK358 2SK358 N-Channel Transistor Toshiba