2SK357 - N-Channel MOSFET
2SK357 Features
* . Low Drain-Source ON Resistance : RdS(ON)=°- 6Q (Typ. . High Forward Transfer Admittance: 1 Yf s l =1 . 8S (Typ . . High Drain Current : Iop=8A(Max.) . Low Leakage Current: lGSS =±100nA(Max. ) @ Vqq=±20V . Enhancement-Mode I DSS =lmA(Max.) @ V D s=150V : V t h=l . 5 ~ 3. 5V @ lD=lmA INDUSTR
