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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3571
SWITCHING N-CHANNEL POWER MOS FET
DESCRIPTION
The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
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ORDERING INFORMATION
PART NUMBER 2SK3571 2SK3571-S 2SK3571-ZK PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note
FEATURES
•4.5V drive available. •Low on-state resistance, RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A) •Low gate charge QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) •Built-in gate protection diode •Surface mount device available
2SK3571-Z
Note TO-220SMD package is produced only in Japan.