2SK3574
DESCRIPTION
The 2SK3574 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
5 ORDERING INFORMATION
PART NUMBER 2SK3574 2SK3574-S 2SK3574-ZK 2SK3574-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote
FEATURES
- 4.5V drive available
- Low on-state resistance RDS(on)1 = 13.5 mΩ MAX. (VGS = 10 V, ID = 24 A)
- Low gate charge QG = 22 n C TYP. (VDD = 24 V, VGS = 10 V, ID = 48 A)
- Built-in gate protection diode
- Avalanche capability ratings
- Surface mount device available
Note TO-220SMD package is produced only in Japan.
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25°C) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
30 ±20 ±48 ±140 1.5 29 150
- 55 to +150 19 36
V V A A W W °C °C A m J
Total Power Dissipation (TA = 25°C)...
