Datasheet4U Logo Datasheet4U.com

2SK3571 - Switching N-Channel MOSFET

General Description

The 2SK3571 is N-channel MOS FET device that

Key Features

  • a low on-state resistance and excellent switching characteristics, designed for low voltage high current.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3571 N-Channel MOSFET Transistor Inchange Semiconductor
2SK3571 MOS Field Effect Transistor Kexin
2SK3571-S N-Channel MOSFET Transistor Inchange Semiconductor
2SK3571-Z N-Channel MOSFET Transistor Inchange Semiconductor
2SK3571-ZK N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
2SK3570 Switching N-Channel MOSFET
2SK3572 Switching N-Channel MOSFET
2SK3573 Switching N-Channel MOSFET
2SK3574 Switching N-Channel MOSFET
2SK3575 Switching N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3571 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. 5 ORDERING INFORMATION PART NUMBER 2SK3571 2SK3571-S 2SK3571-ZK PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note FEATURES •4.5V drive available. •Low on-state resistance, RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A) •Low gate charge QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) •Built-in gate protection diode •Surface mount device available 2SK3571-Z Note TO-220SMD package is produced only in Japan.