2SK3571 Datasheet | NEC

DATA SHEET MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3571 is N-channel MOS FET device that Features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. ORDERING INFORMATION PART NUMBER 2SK3571 2SK3571-S 2SK3571-ZK PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note Features - 4.5V drive available. - Low on-state resistance, RDS(on)1 = 9.0 mΩ MAX. (VGS = 10 V, ID = 24 A) - Low gate charge QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) - Built-in gate protection diode - Surface mount device available 2SK3571-Z Note TO-220SMD...