Part 2SK3571
Description MOS Field Effect Transistor
Category Transistor
Manufacturer Kexin Semiconductor
Size 40.74 KB
Kexin Semiconductor
2SK3571

Overview

  • 5V drive available. Low on-state resistance, RDS(on)1 = 9m MAX. (VGS = 10 V, ID = 24 A) Low gate charge QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) Built-in gate protection diode Surface mount device available +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2
  • 57 +0.1 -0.2
  • 27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60
  • 27+0.1 -0.1
  • 54+0.2 -0.2
  • 08+0.1 -0.1
  • 81+0.1 -0.1
  • 4+0.2 -0.2 1 Gate 2 Drain 3 Source