Datasheet4U Logo Datasheet4U.com

2SK3571 - MOS Field Effect Transistor

Key Features

  • 4.5V drive available. Low on-state resistance, RDS(on)1 = 9m MAX. (VGS = 10 V, ID = 24 A) Low gate charge QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) Built-in gate protection diode Surface mount device available +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.2 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
2SK3571 Switching N-Channel MOSFET NEC Electronics
2SK3571 N-Channel MOSFET Transistor Inchange Semiconductor
2SK3571-S N-Channel MOSFET Transistor Inchange Semiconductor
2SK3571-Z N-Channel MOSFET Transistor Inchange Semiconductor
2SK3571-ZK N-Channel MOSFET Transistor Inchange Semiconductor

Other Datasheets by Kexin Semiconductor

Part Number Description
2SK3570 MOS Field Effect Transistor
2SK3572 MOS Field Effect Transistor
2SK3573 MOS Field Effect Transistor
2SK3574 MOS Field Effect Transistor
2SK3575 MOS Field Effect Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SMD Type MOSFET MOS Field Effect Transistor 2SK3571 Features 4.5V drive available. Low on-state resistance, RDS(on)1 = 9m MAX. (VGS = 10 V, ID = 24 A) Low gate charge QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) Built-in gate protection diode Surface mount device available +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: mm +0.1 1.27 -0.1 +0.2 2.54 -0.2 15.25-+00..22 5.60 1.27+0.1 -0.1 0.1max 2.54+0.2 -0.2 5.08+0.1 -0.1 0.81+0.1 -0.1 2.54 0.4+0.2 -0.