| Part Number | 2SK3571 Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type MOSFET MOS Field Effect Transistor 2SK3571 Features 4.5V drive available. Low on-state resistance, RDS(on)1 = 9m MAX. (VGS = 10 V, ID = 24 A) Low gate charge QG = 21 nC TYP. (VDD = 16 V, V. 4.5V drive available. Low on-state resistance, RDS(on)1 = 9m MAX. (VGS = 10 V, ID = 24 A) Low gate charge QG = 21 nC TYP. (VDD = 16 V, VGS = 10 V, ID = 48 A) Built-in gate protection diode Surface mount device available +0.2 5.28 -0.2 +0.2 8.7 -0.2 TO-263 +0.2 4.57 +0.1 -0.2 1.27-0.1 Unit: m. |
2SK3571 Datasheet and Specifications PDF
The 2SK3571 is a MOS Field Effect Transistor.
| Part Number | 2SK3571 Datasheet |
|---|---|
| Description | Switching N-Channel MOSFET |
| Manufacturer | NEC |
| Overview |
The 2SK3571 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with.
a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
5
ORDERING INFORMATION
PART NUMBER 2SK3571 2SK3571-S 2SK3571-ZK PACKAGE TO-220AB TO-262 TO-263 TO-220SMD Note
FEATURES
*4.5V dr. |
| Part Number | 2SK3571 Datasheet |
|---|---|
| Description | N-Channel MOSFET Transistor |
| Manufacturer | Inchange Semiconductor |
| Overview |
·motor drive, DC-DC converter, power switch
and solenoid drive.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage-Continuou.
*Drain Current : ID= 48A@ TC=25℃ *Drain Source Voltage : VDSS= 20V(Min) *Static Drain-Source On-Resistance : RDS(on) = 9mΩ(Max) @ VGS= 10V *100% avalanche tested *Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION *motor drive, DC-DC converter, power swit. |