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2SK357 - N-Channel MOSFET

Key Features

  • . Low Drain-Source ON Resistance : RdS(ON)=°- 6Q (Typ. . High Forward Transfer Admittance: 1 Yf s l =1 . 8S (Typ . . High Drain Current : Iop=8A(Max. ) . Low Leakage Current: lGSS =±100nA(Max. ) @ Vqq=±20V . Enhancement-Mode I DSS =lmA(Max. ) @ V D s=150V : V t h=l . 5 ~ 3. 5V @ lD=lmA.

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Datasheet Details

Part number 2SK357
Manufacturer Toshiba
File Size 130.52 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK357 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SILICON N CHANNEL MOS TYPE (7T-MOS) 2SK357 HIGH SPEED, HIGH VOLTAGE SWITCHING APPLICATIONS. DC-DC CONVERTER, MOTOR AND SOLENOID DRIVE APPLICATIONS. FEATURES . Low Drain-Source ON Resistance : RdS(ON)=°- 6Q (Typ. . High Forward Transfer Admittance: 1 Yf s l =1 . 8S (Typ . . High Drain Current : Iop=8A(Max.) . Low Leakage Current: lGSS =±100nA(Max. ) @ Vqq=±20V . Enhancement-Mode I DSS =lmA(Max.) @ V D s=150V : V t h=l . 5 ~ 3. 5V @ lD=lmA INDUSTRIAL APPLICATIONS Unit in mm Id 3 MAX.. 03.6 ±0.