• Part: 2SK357
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Toshiba
  • Size: 130.52 KB
Download 2SK357 Datasheet PDF
Toshiba
2SK357
FEATURES . Low Drain-Source ON Resistance : Rd S(ON)=°- 6Q (Typ. . High Forward Transfer Admittance: 1 Yf s l =1 . 8S (Typ . . High Drain Current : Iop=8A(Max.) . Low Leakage Current: l GSS =±100n A(Max. ) @ Vqq=±20V . Enhancement-Mode I DSS =lm A(Max.) @ V D s=150V : V t h=l . 5 ~ 3. 5V @ l D=lm A INDUSTRIAL APPLICATIONS Unit in mm Id 3 MAX.. 03.6 ±0.2 MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL RATING UNIT Drain-Source Voltage Vd SX Gate-Source Voltage V GSS ±20 Drain Current Pulse I DP Drain Power Dissipation (Tc=25°C) Channel Temperature Storage Temperature Range T ch -stg ELECTRICAL CHARACTERISTICS (Ta==25 C) -55~150 1. OATE 2. DRAIN (HEAT SINK) 3. SOURCE TO-220 AB TOSHIBA 2-10A1C Weight : 1.' CHARACTERISTIC SYMBOL...