2SK3582TK Datasheet - Toshiba Semiconductor

2SK3582TK N-Channel MOSFET

2SK3582TK TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TK For ECM Application for Ultra-compact ECM 0.22±0.05 1.2±0.05 0.8±0.05 0.32±0.05 3 2 0.1±0.05 Unit: mm 0.45 0.45 1.4±0.05 Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 55~125 Unit V mA °C °C 0.395±0.03 mW 0.9±0.1 Absolute Maximum Ratings (Ta=25°C) 1 No.

2SK3582TK_ToshibaSemiconductor.pdf