2SK3544 - Silicon N-Channel MOS Type FET
2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π-MOS V) 2SK3544 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 450 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain source voltage Drain gate vo
