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2SK3544 Datasheet - Toshiba Semiconductor

2SK3544 Silicon N-Channel MOS Type FET

2SK3544 TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type (π-MOS V) 2SK3544 Switching Regulator Applications Low drain-source ON-resistance: RDS (ON) = 0.29 Ω (typ.) High forward transfer admittance: |Yfs| = 5.8 S (typ.) Low leakage current: IDSS = 100 μA (max) (VDSS = 450 V) Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain source voltage Drain gate vo.

2SK3544_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SK3544

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

203.50 KB

Description:

Silicon n-channel mos type fet.

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2SK3544 2SK3544 Silicon N-Channel MOS Type FET Toshiba Semiconductor

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