Datasheet Specifications
- Part number
- 2SK3563
- Manufacturer
- Toshiba ↗ Semiconductor
- File Size
- 338.22 KB
- Datasheet
- 2SK3563_ToshibaSemiconductor.pdf
- Description
- N-Channel MOSFET
Description
DataSheet.in TENTATIVE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563 2SK3563 unit：ｍｍ Switching Regulator Application.
Applications
* 10±0.3 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.5 150 -55~150 A W mJ A mJ °C °C Unit 0.69±0.15 2.8Max V V2SK3563 Distributors
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