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2SK3563 Datasheet - Toshiba Semiconductor

2SK3563 N-Channel MOSFET

DataSheet.in TENTATIVE TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅥ) 2SK3563 2SK3563 unit：ｍｍ Switching Regulator Applications 10±0.3 Maximum Ratings (Ta = 25°C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage DC Drain current (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 5 20 35 180 5 3.5 150 -55~150 A W mJ A mJ °C °C Unit 0.69±0.15 2.8Max V V V 2.54±0.25 0.64±0.15 2.54±0.25 2.6 Pulse (t = .

2SK3563 Datasheet (338.22 KB)

Preview of 2SK3563 PDF

Datasheet Details

Part number:

2SK3563

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

338.22 KB

Description:

N-channel mosfet.

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2SK3563 N-Channel MOSFET Toshiba Semiconductor

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