2SK3582TV Datasheet - Toshiba Semiconductor

2SK3582TV N-Channel MOSFET

2SK3582TV TOSHIBA Field Effect Transistor Silicon N Channel Junction Type 2SK3582TV For ECM Application for Ultra-compact ECM 0.2±0.05 1.2±0.05 0.3±0.05 3 0.8±0.05 Unit: mm 1.2±0.05 0.8±0.1 Absolute Maximum Ratings (Ta=25°C) Characteristic Gate-Drain voltage Gate Current Drain power dissipation (Ta = 25°C) Junction Temperature Storage temperature range Symbol VGDO IG PD Tj Tstg Rating -20 10 100 125 55~125 Unit V mA mW °C °C 0.4 1 2 0.4 0.28±0.02 Note: Using continu.

2SK3582TV_ToshibaSemiconductor.pdf