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BU208A Datasheet - Toshiba

BU208A - SILICON NPN Transistor

BU208A Features

* . High Voltage : V CES =1500V . Low Saturation Voltage : VcE(sat)=lV (Max.)

* Fall Time : tf=0.7,us (Typ.) . Glass Passivated Collector-Base Junction Unit in mm 02 5.OMAX, #2 1.0 MAX, tr m dxr + 0.09 0i.o -a 03 30.2x0.2 MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Emitter Vol

BU208A-Toshiba.pdf

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Datasheet Details

Part number:

BU208A

Manufacturer:

Toshiba ↗

File Size:

112.21 KB

Description:

Silicon npn transistor.

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