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BU326A Datasheet - Toshiba

BU326A Silicon NPN Transistor

BU326A Features

* . High Voltage : V CBO=900V . High Peak Current Capability : Ic(Peak) =8A

* Fall Time : tf=0.5/»s (Max.) . Glass Passivated Collector-Base Junction. 33 BU326A Unit in mm 025OMAX. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VcBO

BU326A Datasheet (116.99 KB)

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Datasheet Details

Part number:

BU326A

Manufacturer:

Toshiba ↗

File Size:

116.99 KB

Description:

Silicon npn transistor.

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TAGS

BU326A Silicon NPN Transistor Toshiba

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