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BU326A Silicon NPN Transistor

BU326A Description

: SILICON NPN TRIPLE DIFFUSED MESA TYPE HIGH POWER SWITCHING REGULATOR APPLICATIONS..

BU326A Features

* . High Voltage : V CBO=900V . High Peak Current Capability : Ic(Peak) =8A
* Fall Time : tf=0.5/»s (Max. ) . Glass Passivated Collector-Base Junction. 33 BU326A Unit in mm 025OMAX. MAXIMUM RATINGS (Ta=25 C) CHARACTERISTIC SYMBOL Collector-Base Voltage Collector-Emitter Voltage VcBO

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Silicon NPN Transistor Toshiba
Toshiba BU326A-like datasheet