C4213 2SC4213

Toshiba

Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 2SC4213 For Muting and Switching Applications Unit: mm * High emitter-base.

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Datasheet Specifications

Part number: C4213
Manufacturer: Toshiba ↗
File Size: 532.52 KB
Datasheet: C4213-Toshiba.pdf
Description: 2SC4213

Applications

* Unit: mm
* High emitter-base voltage: VEBO = 25 V
* High reverse hFE: Reverse hFE = 150 (typ. ) (VCE =
* 2 V, IC =
* 4 mA)
* Low on resistance: RON = 1 Ω (typ. ) (IB = 5 mA)
* High DC current gain: hFE = 200 to 1200
* Small package Absolute Maximum Ratings (Ta  25

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C4213 2SC4213 Toshiba

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