TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) 2SC4213 2SC4213 For Muting and Switching Applications Unit: mm High emitter-base voltage: VEBO = 25 V High reverse hFE: Reverse hFE = 150 (typ.) (VCE = 2 V, IC = 4 mA) Low on resistance: RON = 1 Ω (typ.) (IB = 5 mA) High DC current gain: hFE = 200 to 1200 Small package Absolute Maximum Ratings (Ta 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter.
