C4497 Datasheet - Toshiba

2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC4497 High Voltage Control Applications Unit: mm High voltage: VCBO = 300 V, VCEO = 300 V Low saturation voltage: VCE (sat) = 0.5 V (max) Small collector output capacitance: Cob = 3 pF (typ.) Complementary to 2SA1721 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector curren