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C4497 2SC4497

C4497 Description

2SC4497 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC4497 High Voltage Control Applications Unit: mm * High voltage.

C4497 Applications

* Unit: mm
* High voltage: VCBO = 300 V, VCEO = 300 V
* Low saturation voltage: VCE (sat) = 0.5 V (max)
* Small collector output capacitance: Cob = 3 pF (typ. )
* Complementary to 2SA1721 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Col

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Toshiba C4497-like datasheet