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C5122 - 2SC5122

C5122 Description

TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm * High breakdown voltage: V.

C5122 Applications

* 2SC5122 Unit: mm
* High breakdown voltage: VCEO = 400 V
* Low saturation voltage: VCE (sat) = 0.4 V (typ. ) (IC = 20 mA, IB = 0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 400 V Collector-emitter voltage VCEO 400

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2SC5122 Toshiba
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