Datasheet Details
- Part number
- C5122
- Manufacturer
- Toshiba ↗
- File Size
- 105.93 KB
- Datasheet
- C5122-Toshiba.pdf
- Description
- 2SC5122
C5122 Description
TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5122 High-Voltage switching Applications 2SC5122 Unit: mm * High breakdown voltage: V.
C5122 Applications
* 2SC5122
Unit: mm
* High breakdown voltage: VCEO = 400 V
* Low saturation voltage: VCE (sat) = 0.4 V (typ. )
(IC = 20 mA, IB = 0.5 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 400 V
Collector-emitter voltage
VCEO 400
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