C5570
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C5574 - Power Transistor
(ROHM)
Transistors
Power Transistor (80V, 4A)
2SC5574
2SC5574
Features 1) Low saturation voltage.
(Typ. VCE(sat) = 0.3V at IC / IB =2 / 0.2A) 2) Excellent.
C5578 - 2SC5578
(Sanyo Semicon Device)
Ordering number:ENN6297
NPN Triple Diffused Planar Silicon Transistor
2SC5578
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applicat.
C5502 - 2SC5502
(Sanyo)
Ordering number:ENN6279
NPN Epitaxial Planar Silicon Transistor
2SC5502
High-Frequency Low-Noise Amplifier Applications
Features
· Low noise : NF=1..
C5505 - 2SC5505
(Panasonic)
Power Transistors
2SC5505
Silicon NPN epitaxial planar type
For power amplification
9.9±0.3
Unit: mm 4.6±0.2
2.9±0.2
3.0±0.5
■ Features
• High-s.
C5508 - NPN SILICON RF TRANSISTOR
(UTC)
UNISONIC TECHNOLOGIES CO., LTD
2SC5508
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
NPN SILICON RF TRANSISTOR
DESCRIPTION
The UTC 2SC5508 is an.
C5508 - 2SC5508
(NEC)
PRELIMINARY DATA SHEET
NPN SILICON RF TRANSISTOR
2SC5508
NPN SILICON RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER.
C5508 - NPN SILICON RF TRANSISTOR
(Renesas)
Preliminary Data Sheet
2SC5508
NPN SILICON RF TRANSISTOR FOR LOW-NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04)
R09D.
C5511 - 2SC5511
(Rohm)
2SC5511
Transistors
..
For Audio Amplifier output - TV Velosity Modulation (160V, 1.5A)
2SC5511
zExternal dimensions (Unit : mm)
TO.
C5516 - 2SC5516
(Panasonic)
Power Transistors
..
2SC5516
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5
4.5
Unit: mm
q
q q
.
C5517 - Silicon NPN Transistor
(Panasonic)
Power Transistors
2SC5517
Silicon NPN triple diffusion mesa type
For horizontal deflection output
15.5±0.5 φ 3.2±0.1
Unit: mm
3.0±0.3 5˚
5˚
(4.5).