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D1220 - 2SD1220

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  • mitation, the EU RoHS Directive.

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) 2SD1220 2SD1220 Power Amplifier Applications Unit: mm • Complementary to 2SB905 Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Ta = 25°C Tc = 25°C VCBO VCEO VEBO IC IB PC 150 V 150 V 6V 1.5 A 1.0 A 1.0 W 10 Junction temperature Tj 150 °C Storage temperature range Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in JEDEC JEITA ― ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
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