Datasheet Specifications
- Part number
- DF2B5M4ASL
- Manufacturer
- Toshiba ↗
- File Size
- 368.19 KB
- Datasheet
- DF2B5M4ASL-Toshiba.pdf
- Description
- ESD Protection Diodes
Description
ESD Protection Diodes Silicon Epitaxial Planar DF2B5M4ASL DF2B5M4ASL 1.General The DF2B5M4ASL is a TVS diode (ESD protection diode) protects semico.
Features
* (1) Suitable for use with a 3.3 V signal line. (VRWM ≤ 3.6 V) (2) Protects devices with its high ESD performance. (VESD = ±16 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.7 Ω (typ. )) (4) Snapback characteristApplications
* to protect against static electricity and noise. Utilizing snapback characteristics, the DF2B5M4ASL provides low dynamic resistance and superior protective performance. Furthermore, it is optimum the high speed signal application for the low capacitance performance. The DF2B5M4ASL is housed in an ulDF2B5M4ASL Distributors
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