DF2B6M4ASL Datasheet - Toshiba

DF2B6M4ASL, ESD Protection Diodes

ESD Protection Diodes Silicon Epitaxial Planar DF2B6M4ASL DF2B6M4ASL 1.General The DF2B6M4ASL is a TVS diode (ESD protection diode) protects semico.

Features

* (1) Suitable for use with a 5.0 V signal line. (VRWM ≤ 5.5 V) (2) Protects devices with its high ESD performance. (VESD = ±15 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.7 Ω (typ. )) (4) Snapback characterist

Applications

* to protect against static electricity and noise. Utilizing snapback characteristics, the DF2B6M4ASL provides low dynamic resistance and superior protective performance. Furthermore, it is optimum the high speed signal application for the low capacitance performance. The DF2B6M4ASL is housed in an ul

DF2B6M4ASL-Toshiba.pdf