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DF2B6M4ASL - ESD Protection Diodes

Toshiba

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Datasheet Details

Part number	DF2B6M4ASL
Manufacturer	Toshiba ↗
File Size	355.72 KB
Description	ESD Protection Diodes
Datasheet	DF2B6M4ASL-Toshiba.pdf

DF2B6M4ASL Product details

Features

(1) Suitable for use with a 5.0 V signal line. (VRWM ≤ 5.5 V) (2) Protects devices with its high ESD performance. (VESD = ±15 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.7 Ω (typ. )) (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (VC = 10 V@IPP = 2 A (typ. )) (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (0.62 m.

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Published: Apr 15, 2020 |