DF2B6M4SL Datasheet - Toshiba Semiconductor

DF2B6M4SL ESD Protection Diodes

ESD Protection Diodes Silicon Epitaxial Planar DF2B6M4SL DF2B6M4SL 1. General The DF2B6M4SL is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise. Utilizing snapback characteristics, the DF2B6M4SL provides low dynamic resistance and superior protective performance. Furthermore, it is optimum the high speed signal application for the low capacitance performance. The DF2B6M4SL i.

DF2B6M4SL Features

* (1) Suitable for use with a 5.0 V signal line. (VRWM ≤ 5.5 V) (2) Protects devices with its high ESD performance. (VESD = ±20 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.5 Ω (typ.)) (4) Snapback characterist

DF2B6M4SL-ToshibaSemiconductor.pdf