DF2B6M4SL - ESD Protection Diodes

Toshiba Semiconductor

Datasheet Details

Part number	DF2B6M4SL
Manufacturer	Toshiba ↗ Semiconductor
File Size	351.00 KB
Description	ESD Protection Diodes
Datasheet	DF2B6M4SL-ToshibaSemiconductor.pdf

(1) Suitable for use with a 5.0 V signal line. (VRWM ≤ 5.5 V) (2) Protects devices with its high ESD performance. (VESD = ±20 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise. (RDYN = 0.5 Ω (typ. )) (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices. (VC = 10 V@IPP = 2 A (typ. )) (5) Compact package is suitable for use in high density board layouts such as in mobile devices. (0.32 ×.

📁 DF2B6M4SL Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Published: Mar 8, 2016 |