DSR01S30SL - Schottky Barrier Diode

Toshiba

DSR01S30SL Description

Schottky Barrier Diode Silicon Epitaxial DSR01S30SL 1.Applications * High-Speed Switching 2..

DSR01S30SL Features

* (1) Low reverse current: IR = 0.7 µA (max) @ VR = 30 V 3. Packaging and Internal Circuit DSR01S30SL 1: Cathode 2: Anode SL2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 30 V Peak forward current IFM

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Datasheet Details

Part number: DSR01S30SL
Manufacturer: Toshiba ↗
File Size: 138.48 KB
Datasheet: DSR01S30SL-Toshiba.pdf
Description: Schottky Barrier Diode

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Schottky Barrier Diode Toshiba

Toshiba DSR01S30SL-like datasheet