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DSR01S30SL Schottky Barrier Diode

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Description

Schottky Barrier Diode Silicon Epitaxial DSR01S30SL 1.Applications * High-Speed Switching 2..

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Features

* (1) Low reverse current: IR = 0.7 µA (max) @ VR = 30 V 3. Packaging and Internal Circuit DSR01S30SL 1: Cathode 2: Anode SL2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 30 V Peak forward current IFM

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