DSR01S30SL - Schottky Barrier Diode

Product Overview

Toshiba

Part number	DSR01S30SL
Manufacturer	Toshiba
File Size	138.48 KB
Description	Schottky Barrier Diode
Datasheet	DSR01S30SL Datasheet
Additional preview pages of the DSR01S30SL datasheet.

(1) Low reverse current: IR = 0.7 µA (max) @ VR = 30 V 3. Packaging and Internal Circuit DSR01S30SL 1: Cathode 2: Anode SL2 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Note Rating Unit Reverse voltage VR 30 V Peak forward current IFM 200 mA Average rectified current IO (Note 1) 100 mA Non-repetitive peak forward surge current IFSM (Note 2) 2 A Junction temperature Tj 125  Storage temperature Tstg -55 to 125  Note:.

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Published: Jul 25, 2015 |