DSR0.3B
LGE
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Rectifiers.
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DSR0.3A - Rectifiers
(LGE)
1.0 0.2
1.9± 0.1
DSR0.3A-DSR0.3M
SOD - 123FL
Cathode Band Top View
2.8 0.1 0.6 0.25
3.7 0.2
Dimensions in millimeters
0.10-0.30
1.4± 0.15
http://.
DSR0.3D - Rectifiers
(LGE)
1.0 0.2
1.9± 0.1
DSR0.3A-DSR0.3M
SOD - 123FL
Cathode Band Top View
2.8 0.1 0.6 0.25
3.7 0.2
Dimensions in millimeters
0.10-0.30
1.4± 0.15
http://.
DSR0.3G - Rectifiers
(LGE)
1.0 0.2
1.9± 0.1
DSR0.3A-DSR0.3M
SOD - 123FL
Cathode Band Top View
2.8 0.1 0.6 0.25
3.7 0.2
Dimensions in millimeters
0.10-0.30
1.4± 0.15
http://.
DSR0.3J - Rectifiers
(LGE)
1.0 0.2
1.9± 0.1
DSR0.3A-DSR0.3M
SOD - 123FL
Cathode Band Top View
2.8 0.1 0.6 0.25
3.7 0.2
Dimensions in millimeters
0.10-0.30
1.4± 0.15
http://.
DSR0.3K - Rectifiers
(LGE)
1.0 0.2
1.9± 0.1
DSR0.3A-DSR0.3M
SOD - 123FL
Cathode Band Top View
2.8 0.1 0.6 0.25
3.7 0.2
Dimensions in millimeters
0.10-0.30
1.4± 0.15
http://.
DSR0.3M - Rectifiers
(LGE)
1.0 0.2
1.9± 0.1
DSR0.3A-DSR0.3M
SOD - 123FL
Cathode Band Top View
2.8 0.1 0.6 0.25
3.7 0.2
Dimensions in millimeters
0.10-0.30
1.4± 0.15
http://.
DSR01S30SC - Silicon Epitaxial Schottky Barrier Type Diode
(Toshiba Semiconductor)
DSR01S30SC
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSR01S30SC
○ High-Speed Switching Application
Unit: mm
0.1 9±0.02
Absolute Maximu.
DSR01S30SL - Schottky Barrier Diode
(Toshiba)
Schottky Barrier Diode Silicon Epitaxial
DSR01S30SL
1. Applications
• High-Speed Switching
2. Features
(1) Low reverse current: IR = 0.7 µA (max) @ VR.
DSR05S30CTB - Silicon Epitaxial Schottky Barrier Type Diode
(Toshiba Semiconductor)
DSR05S30CTB
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSR05S30CTB
High Speed Switching Application
Unit: mm
0.25±0.02 0.65±0.02
Absolu.
DSR05S30U - Silicon Epitaxial Schottky Barrier Type Diode
(Toshiba Semiconductor)
TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type
DSR05S30U
DSR05S30U
High Speed Switching Applications
Unit: mm
Absolute Maximum Ratings (Ta .
