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DSR01S30SC - Silicon Epitaxial Schottky Barrier Type Diode

DSR01S30SC Description

DSR01S30SC TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR01S30SC ○ High-Speed Switching Application Unit: mm 0.1 9±0.02 Absolute Maximu.

DSR01S30SC Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Rel

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