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DSR01S30SC Datasheet - Toshiba Semiconductor

DSR01S30SC, Silicon Epitaxial Schottky Barrier Type Diode

DSR01S30SC TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR01S30SC ○ High-Speed Switching Application Unit: mm 0.1 9±0.02 Absolute Maximu.
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Datasheet Details

Part number:

DSR01S30SC

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

168.02 KB

Description:

Silicon Epitaxial Schottky Barrier Type Diode

Applications

* customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Rel

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