DSR05S30U Datasheet - Toshiba Semiconductor

DSR05S30U Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR05S30U DSR05S30U High Speed Switching Applications Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 500 ＊ 5 125 55 to 125 V mA A °C °C : Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm. Note: Using continuously under heav.

DSR05S30U Datasheet (172.58 KB)