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DSR05S30U - Silicon Epitaxial Schottky Barrier Type Diode

DSR05S30U Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR05S30U DSR05S30U High Speed Switching Applications Unit: mm Absolute Maximum Ratings (Ta .

DSR05S30U Applications

* Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 500 ＊ 5 125
* 55 to 125 V mA A °C °C
* : Mounted on a glass-epoxy cir

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Silicon Epitaxial Schottky Barrier Type Diode Toshiba Semiconductor
Toshiba Semiconductor DSR05S30U-like datasheet