DSR07S30U Datasheet - Toshiba Semiconductor

DSR07S30U Silicon Epitaxial Schottky Barrier Type Diode

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR07S30U DSR07S30U High Speed Switching Application Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Reverse voltage Average forward current Surge current (10ms) Junction temperature Storage temperature range VR IO IFSM Tj Tstg 30 700 ＊ 5 125 55 to 125 V mA A °C °C : Mounted on a glass-epoxy circuit board of 20 × 20 mm, pad dimensions of 4 × 4 mm. Note: Using continuously under heavy.

DSR07S30U-ToshibaSemiconductor.pdf